This flagged up two genes associated with the high intake of tea, coffee, chocolate and caffeinated soft drinks such as colas. One – CYP1A2 – is key to the breakdown of caffeine in the liver. 有两类被标注的基因与茶、咖啡、巧克力以及像可乐这样的含有咖啡因饮料的摄取有关,其中的一类名叫CYP1A2,它是咖啡因在肝脏内分解的重要和关键。
Soft Breakdown Mechanism and Modeling in Ultra Thin Gate Oxide 超薄栅氧化层中的软击穿的击穿机理和击穿模型
Current Simulation Based on the Percolation-Like Conduction in Ultra-Thin Gate Oxides After Soft Breakdown 基于类渗流导电的超薄栅氧化层软击穿后的电流模拟
In this paper, sev-eral main breakdown models of TDDB are introduced. Then SBD ( soft breakdown) and HBD ( hard breakdown) are compared. Finally the relationship between TDDB and field, temperature and gate oxide thickness are illuminated. 本文重点介绍了TDDB的几种主要击穿模型和机理,比较了软击穿和硬击穿过程的联系与区别,并初步分析了TDDB与测试电场、温度以及氧化层厚度的关系。
The output and transfer characteristic have small change after soft breakdown as the degradations of drain current and threshold voltage is continuous. 在软击穿后,输出特性和转移特性只有小的改变.在软击穿发生时,漏端的电流和域值电压的退化是连续变化的。
Conduction mechanism of ultra-thin gate oxide n-MOSFET after soft breakdown 超薄栅氧化层n-MOSFET软击穿后的导电机制
Soft Breakdown Characteristics of Ultra-thin High-K HfO_2 Gate Dielectrics 超薄HfO2高K栅介质薄膜的软击穿特性
The Utility Restoring Program of Soft Breakdown in Computer System 实用计算机系统软故障修复程序
The main engineering geological problems are as follows: soft soil, powder soil, welled soil ( rock), landslip, breakdown talus and broken weak rock mass. 主要的工程地质问题有:软土、粉土、膨胀土(岩)、滑坡、崩塌岩堆、岩溶、破碎软弱岩体等。
After the soft breakdown, the leakage current at the low electric field increases irregularly. 软击穿后栅介质低场漏电流无规则增大。
Important transistor parameters are monitored under homogeneous stress at different temperature until the soft breakdown occurred. 在晶体管上加均匀的电压应力直到软击穿发生的过程中监控晶体管的参数。
However, the increment of gate leakage current increases abruptly after the soft breakdown. 但是,在软击穿时栅漏电流突然有大量的增加。
In addition, the effective defect density calculated from the soft charge to breakdown distribution is larger than that from breakdown field distribution. 研究还表明,用软击穿电荷分布计算超薄栅介质有效缺陷密度比用永久击穿场强分布计算的要大。
The conduction mechanism of ultra-thin gate oxide n-metal-oxide-semiconductor field effect transistor ( n-MOSFET) after soft breakdown is studied in this paper. 研究了恒压应力下超薄栅氧化层n型金属-氧化物-半导体场效应晶体管(n-MOSFET)软击穿后的导电机制。
BST thin film can recover in a certain time after soft breakdown. However, since the next state after soft breakdown is hard breakdown, the longer the soft breakdown continues, the worse the recovering condition is and the more serious the thin film being damaged. 软击穿发生后一定时间内,BST薄膜可以恢复,但是软击穿发生后持续时间越长,恢复的情况越差,薄膜损坏越严重。
Fuzzy set theory provides the soft breakdown with a powerful analytical tool. 而模糊集理论为这种软划分提供了有力的分析工具。
Soft breakdown refers to the process of electron capture by oxygen vacancy and barrier decrease. 软击穿过程是氧空位俘获电子、降低势垒的过程。